The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jul. 17, 2013
United Microelectronics Corp., Hsinchu, TW;
Wan-Fang Chung, Chiayi, TW;
Ping-Chia Shih, Tainan, TW;
Hsiang-Chen Lee, Kaohsiung, TW;
Che-Hao Chang, Tainan, TW;
Jhih-Long Lin, Pingtung County, TW;
Wei-Pin Huang, Kaohsiung, TW;
Shao-Nung Huang, Tainan, TW;
Yu-Cheng Wang, Tainan, TW;
Jaw-Jiun Tu, Kaohsiung, TW;
Chung-Che Huang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device is provided. A substrate having a first area with a first poly layer and a second area with a second poly layer is provided. A nitride HM film is then deposited above the first poly layer of a first device in the first area and above the second poly layer in the second area. Afterwards, a first patterned passivation is formed on the nitride HM film in the first area to cover the nitride HM film and the first device, and a second patterned passivation is formed above the second poly layer in the second area. The second poly layer in the second area is defined by the second patterned passivation.