The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Oct. 30, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kuang-Jung Chen, Poughkeepsie, NY (US);

Steven J. Holmes, Albany, NY (US);

Wu-Song Huang, Brewster, NY (US);

Ranee W. Kwong, Wappingers Falls, NY (US);

Sen Liu, Piscataway, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); G03F 7/11 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/004 (2006.01); H01L 21/027 (2006.01); H01L 21/265 (2006.01); C08L 33/06 (2006.01); C08F 220/26 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); G03F 7/30 (2013.01); G03F 7/322 (2013.01); G03F 7/0046 (2013.01); H01L 21/0276 (2013.01); H01L 21/265 (2013.01); C08L 33/066 (2013.01); C08F 220/26 (2013.01); G03F 7/40 (2013.01);
Abstract

The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.


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