The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Aug. 06, 2012
Toshihiro Ohki, Hadano, JP;
Naoya Okamoto, Isehara, JP;
Yuichi Minoura, Zama, JP;
Kozo Makiyama, Kawasaki, JP;
Shirou Ozaki, Yamato, JP;
Toshihiro Ohki, Hadano, JP;
Naoya Okamoto, Isehara, JP;
Yuichi Minoura, Zama, JP;
Kozo Makiyama, Kawasaki, JP;
Shirou Ozaki, Yamato, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has a shape riding on the compound semiconductor layer, wherein the protection film has a stacked structure of a lower insulating film not containing oxygen and an upper insulating film containing oxygen, and the opening includes a first opening formed in the lower insulating film and a second opening formed in the upper insulating film and wider than the first opening, the first opening and the second opening communicating with each other.