The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Jun. 12, 2013
Novellus Systems, Inc., Fremont, CA (US);
Bayu Thedjoisworo, San Jose, CA (US);
David Cheung, Foster City, CA (US);
Joon Park, Dublin, CA (US);
Novellus Systems, Inc., Fremont, CA (US);
Abstract
Provided are methods and systems for removing a native silicon oxide layer on a wafer. In a non-sequential approach, a wafer is provided with a native silicon oxide layer on a polysilicon layer. An etchant including a hydrogen-based species and a fluorine-based species is introduced, exposed to a plasma, and flowed onto the wafer at a relatively low temperature. The wafer is then heated to a slightly elevated temperature to substantially remove the native oxide layer. In a sequential approach, a wafer is provided with a native silicon oxide layer. A first etchant including a hydrogen-based species and a fluorine-based species is flowed onto the wafer. Then the wafer is heated to a slightly elevated temperature, a second etchant is flowed towards the wafer, and the second etchant is exposed to a plasma to complete the removal of the native silicon oxide layer and to initiate removal of another layer such as a polysilicon layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile