The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Jan. 13, 2013
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Jei-Ming Chen, Tainan, TW;
Yuh-Min Lin, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76819 (2013.01);
Abstract
A method for forming an interlevel dielectric (ILD) layer includes the following steps. A MOS transistor on a substrate is provided. A first undoped oxide layer is deposited to cover the substrate and the MOS transistor. The first undoped oxide layer is planarized. A phosphorus containing oxide layer is deposited on the first undoped oxide layer. A second undoped oxide layer is deposited on the phosphorus containing oxide layer.