The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
May. 23, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chih-Chien Liu, Taipei, TW;
Chia-Lung Chang, Tainan, TW;
Jei-Ming Chen, Tainan, TW;
Jui-Min Lee, Taichung, TW;
Yuh-Min Lin, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 29/0649 (2013.01);
Abstract
A semiconductor structure is located in a recess of a substrate. The semiconductor structure includes a liner, a silicon rich layer and a filling material. The liner is located on the surface of the recess. The silicon rich layer is located on the liner. The filling material is located on the silicon rich layer and fills the recess. Furthermore, a semiconductor process forming said semiconductor structure is also provided.