The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Aug. 17, 2012
Applicants:

Hui Liu, Singapore, SG;

Wen Zhan Zhou, Singapore, SG;

Zheng Zou, Singapore, SG;

Qun Ying Lin, Singapore, SG;

Alex Kai Hung See, Singapore, SG;

Inventors:

Hui Liu, Singapore, SG;

Wen Zhan Zhou, Singapore, SG;

Zheng Zou, Singapore, SG;

Qun Ying Lin, Singapore, SG;

Alex Kai Hung See, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); G02B 6/136 (2006.01); G03F 7/20 (2006.01); G02B 6/124 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 6/124 (2013.01); G03F 7/70633 (2013.01);
Abstract

A method and a device are provided for diffracting incident light from a lithographic scanner in an IC process flow. Embodiments include forming a diffraction grating in a first layer on a semiconductor substrate; and forming a plurality of lithographic alignment marks in a second layer, overlying the first layer, wherein the diffraction grating has a width and a length greater than or equal to a width and length, respectively, of the plurality of lithographic alignment marks.


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