The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Mar. 26, 2013
United Microelectronics Corp., Hsinchu, TW;
Tsai-Yu Wen, Tainan, TW;
Tsuo-Wen Lu, Kaohsiung, TW;
Yu-Ren Wang, Tainan, TW;
Chin-Cheng Chien, Tainan, TW;
Tien-Wei Yu, Kaohsiung, TW;
Hsin-Kuo Hsu, Kaohsiung, TW;
Yu-Shu Lin, Pingtung County, TW;
Szu-Hao Lai, Kaohsiung, TW;
Ming-Hua Chang, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.