The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Apr. 21, 2014
Applicant:

D2s, Inc., San Jose, CA (US);

Inventors:

Akira Fujimura, Saratoga, CA (US);

Ingo Bork, Mountain View, CA (US);

Assignee:

D2S, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/20 (2012.01); G03F 7/20 (2006.01); G03F 1/78 (2012.01); H01J 37/317 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
G03F 1/20 (2013.01); G03F 1/78 (2013.01); G03F 7/2037 (2013.01); G03F 7/2063 (2013.01); H01J 37/3174 (2013.01); H01J 2237/31764 (2013.01); H01J 2237/31771 (2013.01); H01J 2237/31776 (2013.01); Y10S 430/143 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01);
Abstract

In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (β). In some embodiments, the sensitivity to changes in βis reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in βis reduced.


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