The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Aug. 20, 2009
Applicant:
Michael R. Seacrist, Lake Saint Louis, MO (US);
Inventor:
Michael R. Seacrist, Lake Saint Louis, MO (US);
Assignee:
SunEdison Semiconductor Limited (UEN201334164H), Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/66 (2006.01); H01L 21/3065 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); H01L 21/02532 (2013.01); H01L 21/02573 (2013.01); H01L 21/0262 (2013.01); H01L 21/3065 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method for preparing a semiconductor structure for use in the manufacture of three dimensional transistors, the structure comprising a silicon substrate and an epitaxial layer, the epitaxial layer comprising an endpoint detection epitaxial region comprising an endpoint detection impurity selected from the group consisting of carbon, germanium, or a combination.