The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
May. 19, 2014
Intermolecular Inc., San Jose, CA (US);
Sandra G Malhotra, Fort Collins, CO (US);
Sean Barstow, San Jose, CA (US);
Tony P. Chiang, Campbell, CA (US);
Wayne R French, San Jose, CA (US);
Pragati Kumar, Beaverton, OR (US);
Prashant B Phatak, San Jose, CA (US);
Sunil Shanker, Santa Clara, CA (US);
Wen Wu, Pleasanton, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.