The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Jan. 31, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/768 (2006.01); G06F 17/50 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76838 (2013.01); G06F 17/5077 (2013.01); H01L 23/481 (2013.01); H01L 2924/0002 (2013.01); G06F 2217/78 (2013.01);
Abstract
A method comprises: forming a plurality of reference voltage patterns in a first layer of a semiconductor substrate using a first mask, the reference voltage patterns including alternating first reference voltage patterns and second reference voltage patterns; and forming a plurality of signal patterns in the first layer of the semiconductor substrate using a second mask, ones of the plurality of signal patterns located between successive pairs of reference voltage patterns.