The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Nov. 25, 2010
Vijay Immanuel Raman, Mannheim, DE;
Yuzhuo LI, Heidelberg, DE;
Mario Brands, Ludwigshafen, DE;
Yongqing Lan, Potsdam, NY (US);
Kenneth Rushing, Ludwigshafen, DE;
Karpagavalli Ramji, Chicago, IL (US);
Vijay Immanuel Raman, Mannheim, DE;
Yuzhuo Li, Heidelberg, DE;
Mario Brands, Ludwigshafen, DE;
Yongqing Lan, Potsdam, NY (US);
Kenneth Rushing, Ludwigshafen, DE;
Karpagavalli Ramji, Chicago, IL (US);
BASF SE, Ludwigshafen, DE;
Abstract
An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.