The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Mar. 21, 2011
Kunihiro Yamada, Mie-ken, JP;
Hideaki Aochi, Kanagawa-ken, JP;
Masaru Kito, Kanagawa-ken, JP;
Tomoko Fujiwara, Kanagawa-ken, JP;
Yoshiaki Fukuzumi, Kanagawa-ken, JP;
Ryouhei Kirisawa, Kanagawa-ken, JP;
Yoshimasa Mikajiri, Mie-ken, JP;
Kaori Kawasaki, Kanagawa-ken, JP;
Kunihiro Yamada, Mie-ken, JP;
Hideaki Aochi, Kanagawa-ken, JP;
Masaru Kito, Kanagawa-ken, JP;
Tomoko Fujiwara, Kanagawa-ken, JP;
Yoshiaki Fukuzumi, Kanagawa-ken, JP;
Ryouhei Kirisawa, Kanagawa-ken, JP;
Yoshimasa Mikajiri, Mie-ken, JP;
Kaori Kawasaki, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a method of operating a semiconductor memory device is disclosed. The method can include storing read-only data in at least one selected from a memory cell of an uppermost layer and a memory cell of a lowermost layer of a plurality of memory cells connected in series via a channel body. The channel body extends upward from a substrate to intersect a plurality of electrode layers stacked on the substrate. The method can include prohibiting a data erase operation of the read-only memory cell having the read-only data stored in the read-only memory cell.