The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Oct. 22, 2013
Macronix International Co., Ltd., Hsinchu, TW;
Yu-Ming Chang, Jiadong Township, TW;
Yung-Chun Li, New Taipei, TW;
Hsing-Chen Lu, Hsinchu, TW;
Hsiang-Pang Li, Zhubei, TW;
Cheng-Yuan Wang, Taipei, TW;
Yuan-Hao Chang, Taipei, TW;
Tei-Wei Kuo, New Taipei, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
Technology is described that supports reduced program disturb of nonvolatile memory. A three/two dimensional NAND array includes a plurality of pages, which are divided into a plurality of page groups. Access is allowed to memory cells within a first page group of a plurality of page groups in an erase block of the three dimensional NAND array, while access is minimized to memory cells within a second page group of the plurality of page groups in the erase block of the three/two dimensional NAND array. Pages in the same page group are physically nonadjacent with each other in the three/two dimensional NAND array.