The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Jan. 14, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Koichi Tachibana, Kanagawa-ken, JP;
Toshiki Hikosaka, Tokyo, JP;
Shigeya Kimura, Kanagawa-ken, JP;
Hajime Nago, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InGaN and has a layer thickness t. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InGaN and has a layer thickness t. A p-side end well layer which is closest to the p-type semiconductor layer contains InGaN and has a layer thickness t. A p-side end barrier layer which is closest to the p-type semiconductor contains InGaN and has a layer thickness t. A value of (wp×t+bp×t)/(t+t) is higher than (wn×t+bn×t)/(t+t) and is not higher than 5 times (wn×t+bn×t)/(t+t).