The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Mar. 08, 2013
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Svetlana B. Radovanov, Brookline, MA (US);

Ludovic Godet, Boston, MA (US);

Anthony Renau, West Newbury, MA (US);

Xianfeng Lu, Beverly, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21K 5/00 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2658 (2013.01);
Abstract

An apparatus for hydrogen and helium implantation is disclosed. The apparatus includes a plasma source system to generate helium ions and hydrogen molecular ions comprising Hions. The apparatus further includes a substrate chamber adjacent the plasma source system and in communication with the plasma source system via one or more apertures, an extraction system to extract the hydrogen molecular ions and helium ions from the plasma source system, and an acceleration system to accelerate extracted helium and hydrogen molecular ions to a predetermined energy and direct the extracted helium ions and hydrogen molecular ions to a substrate.


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