The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Nov. 18, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Wei Cheng, Singapore, SG;
Ming Sheng Xu, Singapore, SG;
Duan Quan Liao, Singapore, SG;
Yikun Chen, Singapore, SG;
Ching Hwa Tey, Singapore, SG;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor device includes the following steps. At least a first gate stack layer and at least a second gate stack layer protruding from a conductive layer on a substrate are provided. Subsequently, two spacers and a protective layer are formed on the conductive layer, and the two spacers and the protective layer jointly surround the protruded first gate stack layer and the protruded second gate stack layer. The two spacers and the protective layer are used as a mask to remove a part of the conductive layer. Afterwards, the two spacers and the protective layer are removed.