The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Dec. 19, 2012
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Kwee Liang Yeo, Singapore, SG;

Chim Seng Seet, Singapore, SG;

Zheng Zou, Singapore, SG;

Alex See, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 29/401 (2013.01); H01L 21/28052 (2013.01); H01L 29/665 (2013.01); H01L 29/66545 (2013.01);
Abstract

A device and methods for forming the device are disclosed. The method includes providing a substrate. A gate having a gate electrode and sidewall spacers are formed adjacent to sidewalls of the gate. A height Hof the gate is lower than a height Hof the sidewall spacers. A metal or metal alloy layer is deposited over the spacers, gate and the substrate. The substrate is processed to form metal silicide contact at least over the gate electrode. A top surface of the metal silicide contact over the gate electrode is about coplanar with a top of the sidewall spacer, and the difference between the height of the gate and spacers prevent formation of metal silicide filaments on top of the sidewall spacers.


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