The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Apr. 19, 2013
United Microelectronics Corp., Hsinchu, TW;
Li-Chiang Chen, Tainan, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Hsuan-Hsu Chen, Tainan, TW;
Feng-Yi Chang, Tainan, TW;
Chieh-Te Chen, Kaohsiung, TW;
Shang-Yuan Tsai, Kaohsiung, TW;
Ching-Pin Hsu, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a semiconductor device is provided. At least one gate structure including a dummy gate is formed on a substrate. A contact etch stop layer and a dielectric layer are formed to cover the gate structure. A portion of the contact etch stop layer and a portion of the dielectric layer are removed to expose the top of the gate structure. A dry etching process is performed to remove a portion of the dummy gate of the gate structure. A hydrogenation treatment is performed to the surface of the remaining dummy gate. A wet etching process is performed to remove the remaining dummy gate and thereby form a gate trench.