The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Feb. 26, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chun-Lin Chang, Jhubei, TW;
Hsin-Hsien Wu, Hsinchu, TW;
Zin-Chang Wei, Hsin-Chu, TW;
Chi-Ming Yang, Hsian-San District, TW;
Chyi-Shyuan Chern, Taipei, TW;
Jun-Lin Yeh, Taipei, TW;
Jih-Jse Lin, Sijhih, TW;
Jo-Fei Wang, Hsin-Chu, TW;
Ming-Yu Fan, Chang-Chun, TW;
Jong-I Mou, Hsin pu Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.