The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Jun. 10, 2011
Applicants:

Eiichi Satou, Hitachi, JP;

Munehiro Oota, Hitachi, JP;

Kanshi Chinone, Hitachi, JP;

Shigeru Nobe, Hitachi, JP;

Kazuhiro Enomoto, Hitachi, JP;

Tadahiro Kimura, Hitachi, JP;

Masato Fukasawa, Hitachi, JP;

Masanobu Habiro, Hitachi, JP;

Yousuke Hoshi, Tsukuba, JP;

Inventors:

Eiichi Satou, Hitachi, JP;

Munehiro Oota, Hitachi, JP;

Kanshi Chinone, Hitachi, JP;

Shigeru Nobe, Hitachi, JP;

Kazuhiro Enomoto, Hitachi, JP;

Tadahiro Kimura, Hitachi, JP;

Masato Fukasawa, Hitachi, JP;

Masanobu Habiro, Hitachi, JP;

Yousuke Hoshi, Tsukuba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 1/00 (2006.01); C09G 1/02 (2006.01); H01L 21/3105 (2006.01); C09K 3/14 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31053 (2013.01); C09G 1/02 (2013.01); C09K 3/1463 (2013.01);
Abstract

The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.


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