The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Sep. 02, 2011
Yiming Huai, Pleasanton, CA (US);
Jing Zhang, Los Altos, CA (US);
Rajiv Yadav Ranjan, San Jose, CA (US);
Yuchen Zhou, San Jose, CA (US);
Roger Klas Malmhall, San Jose, CA (US);
Ioan Tudosa, Milpitas, CA (US);
Yiming Huai, Pleasanton, CA (US);
Jing Zhang, Los Altos, CA (US);
Rajiv Yadav Ranjan, San Jose, CA (US);
Yuchen Zhou, San Jose, CA (US);
Roger Klas Malmhall, San Jose, CA (US);
Ioan Tudosa, Milpitas, CA (US);
Avalanche Technology, Inc., Fremont, CA (US);
Abstract
A spin transfer torque magnetic random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer. The magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization having a preferred direction perpendicular to film plane.