The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Feb. 01, 2013
Applicants:

Boxiu Cai, Shanghai, CN;

Yanlei Zu, Shanghai, CN;

Inventors:

BoXiu Cai, Shanghai, CN;

YanLei Zu, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06K 9/00 (2006.01); H01J 37/26 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01J 37/261 (2013.01); H01L 21/02381 (2013.01); H01L 21/02439 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02521 (2013.01); H01L 21/28088 (2013.01);
Abstract

A standard wafer is provided including a substrate; a first layer of semiconductor material formed on the substrate; a bar formed over the first layer of semiconductor material with an interlayer interposed therebetween; and a first sidewall spacer and a second sidewall spacer formed on the opposite sides of the bar respectively, in which the bar and the first layer of semiconductor material are formed of a same semiconductor material, and the interlayer interposed between the first layer of semiconductor material and the bar is formed of a first oxide, and the first sidewall spacer and the second sidewall spacer are formed of a second oxide. A corresponding fabrication method of the standard wafer is also provided.


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