The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Mar. 19, 2012
Katsuya Nishiyama, Yokohama, JP;
Hisanori Aikawa, Yokohama, JP;
Tadashi Kai, Tokyo, JP;
Toshihiko Nagase, Yokohama, JP;
Koji Ueda, Kamakura, JP;
Hiroaki Yoda, Yokohama, JP;
Katsuya Nishiyama, Yokohama, JP;
Hisanori Aikawa, Yokohama, JP;
Tadashi Kai, Tokyo, JP;
Toshihiko Nagase, Yokohama, JP;
Koji Ueda, Kamakura, JP;
Hiroaki Yoda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a magnetoresistive element includes a storage layer having a perpendicular and variable magnetization, a reference layer having a perpendicular and invariable magnetization, a shift adjustment layer having a perpendicular and invariable magnetization in a direction opposite to a magnetization of the reference layer, a first nonmagnetic layer between the storage layer and the reference layer, and a second nonmagnetic layer between the reference layer and the shift adjustment layer. A switching magnetic field of the reference layer is equal to or smaller than a switching magnetic field of the storage layer, and a magnetic relaxation constant of the reference layer is larger than a magnetic relaxation constant of the storage layer.