The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Aug. 04, 2010
Gerhard Karl Strauch, Aachen, DE;
Gerhard Karl Strauch, Aachen, DE;
Aixtron SE, Herzogenrath, DE;
Abstract
The invention relates to a device and a method for depositing semiconductor layers, in particular made of a plurality of components on one or more substrates () contacting a susceptor (), wherein process gases can be introduced into the process chamber () through flow channels () of a gas inlet organ (), together with a carrier gas, said carrier gas permeating the process chamber () substantially parallel to the susceptor and exits through a gas outlet organ (), wherein the products of decomposition build up the process gases as a coating at least in regions on the substrate surface and on the surface of the gas outlet organ () disposed downstream of the susceptor () at a distance (D) from the downstream edge () thereof. In order to deposit contamination-free layers in sequential process steps without intermediate replacement or intermediate cleaning of the gas outlet organ, according to the invention the distance (D) is great enough to prevent products of decomposition outgassing from the coating of the gas outlet organ () at the second process temperature from reaching the substrate () by counterflow diffusion.