The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Mar. 02, 2011
Yoshiro Hirose, Toyama, JP;
Kenji Kanayama, Toyama, JP;
Norikazu Mizuno, Toyama, JP;
Yushin Takasawa, Toyama, JP;
Yosuke Ota, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Kenji Kanayama, Toyama, JP;
Norikazu Mizuno, Toyama, JP;
Yushin Takasawa, Toyama, JP;
Yosuke Ota, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
There is provided a method for manufacturing a semiconductor device, including forming an insulating film having a prescribed composition and a prescribed film thickness on a substrate by alternately performing the following steps prescribed number of times: supplying one of the sources of a chlorosilane-based source and an aminosilane-based source to a substrate in a processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon on the substrate; and supplying a reactive gas different from each of the sources, to the substrate in the processing chamber, to modify the first layer and form a second layer.