The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Jan. 25, 2013
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Naoto Tsuji, Tokyo, JP;

Fumitaka Shoji, Kawasaki, JP;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/4763 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/31116 (2013.01); H01L 21/32055 (2013.01); H01L 21/32134 (2013.01); H01L 21/32137 (2013.01); C23C 16/30 (2013.01); C23C 16/45523 (2013.01); C23C 16/45557 (2013.01);
Abstract

A method for forming a layer constituted by repeated stacked layers includes: forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein the film stresses of the first and second layers are tensile or compressive and opposite to each other, and the wet etch rates of the first and second layers are at least 50 times different from each other; and repeating the above step to form a layer constituted by repeated stacked layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer.

Published as:
US2014213065A1; KR20140095971A; US9018093B2;

Find Patent Forward Citations

Loading…