The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Jun. 17, 2010
Osamu Nozawa, Shinjku-ku, JP;
Hiroyuki Iwashita, Shinjuku-ku, JP;
Masahiro Hashimoto, Shinjuku-ku, JP;
Atsushi Kominato, Shinjuku-ku, JP;
Osamu Nozawa, Shinjku-ku, JP;
Hiroyuki Iwashita, Shinjuku-ku, JP;
Masahiro Hashimoto, Shinjuku-ku, JP;
Atsushi Kominato, Shinjuku-ku, JP;
Hoya Corporation, Tokyo, JP;
Abstract
Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blankis used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding filmon a transparent substrate. The light-shielding filmhas an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.