The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Jun. 24, 2011
Applicants:

Tomonori Umezaki, Ube, JP;

Yasuo Hibino, Shiki, JP;

Isamu Mori, Tokyo, JP;

Satoru Okamoto, Fujimoto, JP;

Akiou Kikuchi, Ube, JP;

Inventors:

Tomonori Umezaki, Ube, JP;

Yasuo Hibino, Shiki, JP;

Isamu Mori, Tokyo, JP;

Satoru Okamoto, Fujimoto, JP;

Akiou Kikuchi, Ube, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/00 (2006.01); C09K 13/04 (2006.01); C09K 13/08 (2006.01); C09K 13/06 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C09K 13/00 (2013.01); H01L 21/31116 (2013.01); C09K 13/08 (2013.01);
Abstract

A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H, O, O, CO, CO, COCl, COF, CFOF, NO, F, NF, Cl, Br, I, CH, CH, CH, CH, CH, CH, CH, HF, HI, HBr, HCl, NO, NHand YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.


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