The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Jul. 22, 2014
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventors:
Robert Kaim, Brookline, MA (US);
Joseph D. Sweeney, New Milford, CT (US);
Anthony M. Avila, Austin, TX (US);
Richard S. Ray, New Milford, CT (US);
Assignee:
Entegris, Inc., Billerica, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01L 21/265 (2006.01); H01J 37/08 (2006.01); F17C 7/00 (2006.01); H01J 37/30 (2006.01);
U.S. Cl.
CPC ...
H01J 37/08 (2013.01); H01J 37/3171 (2013.01); H01J 2237/022 (2013.01); H01J 2237/304 (2013.01); F17C 7/00 (2013.01); H01L 21/26506 (2013.01); Y02E 60/321 (2013.01); H01J 37/3002 (2013.01);
Abstract
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.