The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
May. 29, 2014
Tokyo Electron Limited, Tokyo, JP;
L'air Liquide, Societe Anonyme Pour L'etude ET L'exploitation Des Procedes Georges Claude, Paris Cedex, FR;
Shuji Moriya, Nirasaki, JP;
Atsushi Ando, Nirasaki, JP;
Jun Sonobe, Tsukuba Ibaraki, JP;
Christopher Turpin, Tsukuba Ibaraki, JP;
L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude, Paris Cedex, FR;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an Fgas that are diluted with an inert gas into the chamber such that the FNO gas and the Fgas are reacted with the portion of silicon existing on the surface of the substrate to be processed.