The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Oct. 01, 2012
United Microelectronics Corp., Hsin-Chu, TW;
Wu-Sian Sie, Tainan, TW;
Chun-Wei Hsu, Taipei, TW;
Chia-Lung Chang, Tainan, TW;
Chih-Hsun Lin, Ping-Tung County, TW;
Chang-Hung Kung, Kaohsiung, TW;
Yu-Ting Li, Chiayi, TW;
Wei-Che Tsao, Tainan, TW;
Yen-Ming Chen, New Taipei, TW;
Chun-Hsiung Wang, Kaohsiung, TW;
Chia-Lin Hsu, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A manufacturing method for a shallow trench isolation. First, a substrate is provided, a hard mask layer and a patterned photoresist layer are sequentially formed on the substrate, at least one trench is then formed in the substrate through an etching process, the hard mask layer is removed. Afterwards, a filler is formed at least in the trench and a planarization process is then performed on the filler. Since the planarization process is performed only on the filler, so the dishing phenomenon can effectively be avoided.