Sensing parameter management in non-volatile memory storage system to compensate for broken word lines

Abstract

Disclosed is a technology to change the parameters by which a read operation is performed in a block with a broken word line. The first method is for reading a broken word line, which may involve changing the voltage on word lines neighboring the broken word line to let the voltage on the broken word line reach the appropriate magnitude through capacitive coupling between word lines. The first method may also involve increasing the time delay before memory cells connected to the broken word line are sensed to allow the voltage on the word line to settle due to increased RC delay. The second method is for reading an unbroken word line in a block with a broken word line, which involves increasing the time delay before memory cells connected to the unbroken word line are sensed while raising the voltages on the word lines neighboring the broken word line.