The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
May. 11, 2012
Lance Scudder, Sunnyvale, CA (US);
Pushkar Ranade, Los Gatos, CA (US);
Charles Stager, Austin, TX (US);
Lucian Shifren, San Jose, CA (US);
Dalong Zhao, San Jose, CA (US);
U.c. Sridharan, San Jose, CA (US);
Michael Duane, San Carlos, CA (US);
Lance Scudder, Sunnyvale, CA (US);
Pushkar Ranade, Los Gatos, CA (US);
Charles Stager, Austin, TX (US);
Lucian Shifren, San Jose, CA (US);
Dalong Zhao, San Jose, CA (US);
U.C. Sridharan, San Jose, CA (US);
Michael Duane, San Carlos, CA (US);
SuVolta, Inc., Los Gatos, CA (US);
Abstract
A method for fabricating a semiconductor structure so as to have reduced junction leakage is disclosed. The method includes providing substitutional boron in a semiconductor substrate. The method includes preparing the substrate using a pre-amorphization implant and a carbon implant followed by a recrystallization step and a separate defect repair/activation step. Boron is introduced to the pre-amorphized region preferably by ion implantation.