The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Dec. 19, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Po-Jui Liao, Taichung, TW;
Tsung-Lung Tsai, Tai-Nan, TW;
Chien-Ting Lin, Hsinchu, TW;
Shao-Hua Hsu, Taoyuan County, TW;
Yeng-Peng Wang, Kaohsiung, TW;
Chun-Hsien Lin, Tainan, TW;
Chan-Lon Yang, Taipei, TW;
Guang-Yaw Hwang, Tainan, TW;
Shin-Chi Chen, Tainan, TW;
Hung-Ling Shih, Chiayi County, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Chia-Wen Liang, Hsinchu County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench formed therein, forming a first work function metal layer in the first gate trench, forming a sacrificial masking layer in the first gate trench, removing a portion of the sacrificial masking layer to expose a portion of the first work function metal layer, removing the exposed first function metal layer to form a U-shaped work function metal layer in the first gate trench, and removing the sacrificial masking layer. The first transistor includes a first conductivity type and the second transistor includes a second conductivity type. The first conductivity type and the second conductivity type are complementary.