The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Feb. 19, 2013
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Shohei Tagami, Annaka, JP;

Michihiro Sugo, Takasaki, JP;

Hiroyuki Yasuda, Tomioka, JP;

Masahiro Furuya, Takasaki, JP;

Hideto Kato, Takasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C09J 7/00 (2006.01); H01L 21/304 (2006.01); H01L 21/683 (2006.01); C09J 7/02 (2006.01);
U.S. Cl.
CPC ...
C09J 7/00 (2013.01); H01L 21/304 (2013.01); H01L 21/6835 (2013.01); C09J 7/0239 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68381 (2013.01); C09J 2201/122 (2013.01); C09J 2201/36 (2013.01); C09J 2203/326 (2013.01); C09J 2483/00 (2013.01);
Abstract

Disclosed is a wafer process body, a temporary adhesive layer is formed on a supporting body, and a wafer having a circuit-formed front surface and a to-be-processed back surface is stacked on the temporary adhesive layer, wherein the temporary adhesive layer is provided with a first temporary adhesive layer including a non-aromatic saturated hydrocarbon group-containing organopolysiloxane layer (A) which is adhered to the front surface of the wafer so as to be detachable and a second temporary adhesive layer comprised of a thermosetting-modified siloxane polymer layer (B) which is stacked on the first temporary adhesive layer and adhered to the supporting body so as to be detachable. Thus, temporary adhesion of a wafer with a supporting body may become easy, process conformity with the TSV formation process and with the wafer-back surface-wiring process may become high, and removal may be done easily, with high productivity.


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