The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Jun. 08, 2012
Applicants:

Reza A. Pagaila, Singapore, SG;

Yaojian Lin, Singapore, SG;

Jun MO Koo, Singapore, SG;

Inventors:

Reza A. Pagaila, Singapore, SG;

Yaojian Lin, Singapore, SG;

Jun Mo Koo, Singapore, SG;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 23/36 (2006.01); H01L 23/498 (2006.01); H01L 23/552 (2006.01); H01L 23/00 (2006.01); H05K 1/02 (2006.01); H05K 1/18 (2006.01); H01L 23/29 (2006.01); H01L 23/367 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/36 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 23/552 (2013.01); H01L 24/11 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/29 (2013.01); H05K 1/0203 (2013.01); H05K 1/186 (2013.01); H01L 24/97 (2013.01); H01L 23/295 (2013.01); H01L 23/3107 (2013.01); H01L 23/367 (2013.01); H01L 23/3675 (2013.01); H01L 23/544 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2221/68381 (2013.01); H01L 2221/68386 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/21 (2013.01); H01L 2224/2105 (2013.01); H01L 2224/215 (2013.01); H01L 2224/22 (2013.01); H01L 2224/221 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/48105 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/48228 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/09701 (2013.01); H01L 24/48 (2013.01); H01L 2224/29 (2013.01); H01L 2224/29298 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0665 (2013.01); H01L 2224/29101 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/13091 (2013.01); H01L 2224/29111 (2013.01); H05K 2201/09772 (2013.01); H01L 2924/1579 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/3011 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/15311 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/24195 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/18162 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A semiconductor device has a thermally conductive layer with a plurality of openings formed over a temporary carrier. The thermally conductive layer includes electrically non-conductive material. A semiconductor die has a plurality of bumps formed over contact pads on the die. The semiconductor die is mounted over the thermally conductive layer so that the bumps are disposed at least partially within the openings in the thermally conductive layer. An encapsulant is deposited over the die and thermally conductive layer. The temporary carrier is removed to expose the bumps. A first interconnect structure is formed over the encapsulant, semiconductor die, and bumps. The bumps are electrically connected to the first interconnect structure. A heat sink or shielding layer can be formed over the semiconductor die. A second interconnect structure can be formed over the encapsulant and electrically connected to the first interconnect structure through conductive vias formed in the encapsulant.


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