The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Jun. 28, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chun Hsiung Tsai, Xinpu Township, TW;
Shiang-Rung Tsai, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An embodiment method of controlling fin bending in a fin field-effect transistor (FinFET) includes forming an isolation region over a substrate, performing a first annealing process, the first annealing process including a first wet anneal, the first wet anneal removing impurities from the isolation region; a second wet anneal, the second wet anneal forming silanol in the isolation region; and a first dry anneal, the first dry anneal dehydrating the isolation region. In an embodiment, the first annealing process is followed by a chemical mechanical planarization (CMP) process, an etching process, and a second annealing process for the isolation region.