The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Mar. 08, 2013
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Ming-Tzong Yang, Baoshan Township, Hsinchu County, TW;

Cheng-Chou Hung, Hukou Township, Hsinchu County, TW;

Tung-Hsing Lee, New Taipei, TW;

Wei-Che Huang, Zhudong Township, Hsinchu County, TW;

Yu-Hua Huang, Hsinchu, TW;

Assignee:

MediaTek Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 29/40 (2006.01); H01L 21/76 (2006.01); H01L 23/522 (2006.01); H01L 31/18 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01L 31/18 (2013.01); H01L 23/481 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/13025 (2013.01);
Abstract

The invention provides a radio-frequency (RF) device package and a method for fabricating the same. An exemplary embodiment of a radio-frequency (RF) device package includes a base, wherein a radio-frequency (RF) device chip is mounted on the base. The RF device chip includes a semiconductor substrate having a front side and a back side. A radio-frequency (RF) component is disposed on the front side of the semiconductor substrate. An interconnect structure is disposed on the RF component, wherein the interconnect structure is electrically connected to the RF component, and a thickness of the semiconductor substrate is less than that of the interconnect structure. A through hole is formed through the semiconductor substrate from the back side of the semiconductor substrate, and is connected to the interconnect structure. A TSV structure is disposed in the through hole.


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