The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Dec. 17, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hiroaki Ikegawa, Yamanashi, JP;

Masahiko Kaminishi, Iwate, JP;

Kosuke Takahashi, Iwate, JP;

Masato Koakutsu, Iwate, JP;

Jun Ogawa, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/68764 (2013.01); H01L 21/02148 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02189 (2013.01); H01L 21/02194 (2013.01); H01L 21/022 (2013.01); H01L 21/68771 (2013.01); C23C 16/45551 (2013.01); C23C 16/4584 (2013.01);
Abstract

A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.


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