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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8987143 B1

PDFFull Text
Date of Patent:
Mar. 24, 2015

Filed:

Sep. 19, 2013

Hydrogen plasma cleaning of germanium oxide surfaces

Applicant:

Intermolecular, Inc., San Jose, CA (US);

Inventors:

Ratsamee Limdulpaiboon, San Jose, CA (US);

Chi-I Lang, Cupertino, CA (US);

Sandip Niyogi, San Jose, CA (US);

J. Watanabe, San Jose, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:

Lan Vinh

Assistant Examiner:

Maki Angadi

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 27/146 (2006.01); H01L 21/283 (2006.01); H01L 29/41 (2006.01); H01L 21/3065 (2006.01); H01L 29/778 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02005 (2013.01); H01L 29/66477 (2013.01); H01L 27/1462 (2013.01); H01L 27/14643 (2013.01); H01L 27/14698 (2013.01); H01L 21/283 (2013.01); H01L 29/41 (2013.01); H01L 21/02104 (2013.01); H01L 21/3065 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02205 (2013.01); H01L 21/0228 (2013.01); H01L 29/778 (2013.01); H01L 29/1606 (2013.01);
Abstract

Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.

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