The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Jun. 06, 2013
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Zhehui Wang, Singapore, SG;

Kwee Liang Yeo, Singapore, SG;

Hai Cong, Singapore, SG;

Huang Liu, Singapore, SG;

Wen Zhan Zhou, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/48 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76897 (2013.01); H01L 21/76816 (2013.01); H01L 21/31144 (2013.01);
Abstract

Semiconductor devices and methods of making thereof are disclosed. The semiconductor device includes a substrate prepared with a first dielectric layer formed thereon. The dielectric layer includes at least first, second and third contact regions. A second dielectric layer is disposed over the first dielectric layer. The device also includes at least first, second and third via contacts disposed in the second dielectric layer. The via contacts are coupled to the respective underlying contact regions and the via contacts do not extend beyond the underlying contact regions.


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