The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Oct. 02, 2008
Patrick Timothy Hurley, Allentown, PA (US);
Robert Gordon Ridgeway, Quakertown, PA (US);
Raymond Nicholas Vrtis, Orefield, PA (US);
Mark Leonard O'neill, Allentown, PA (US);
Andrew David Johnson, Doylestown, PA (US);
Patrick Timothy Hurley, Allentown, PA (US);
Robert Gordon Ridgeway, Quakertown, PA (US);
Raymond Nicholas Vrtis, Orefield, PA (US);
Mark Leonard O'Neill, Allentown, PA (US);
Andrew David Johnson, Doylestown, PA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SiCNHF, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.