The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Jan. 15, 2013
International Business Machines Corporation, Armonk, NY (US);
Daniel C. Edelstein, White Plains, NY (US);
Bryan G. Morris, Cohoes, NY (US);
Tuan A. Vo, Albany, NY (US);
Christopher J. Waskiewicz, Poughkeepsie, NY (US);
Yunpeng Yin, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A lithographic material stack including a metal-compound hard mask layer is provided. The lithographic material stack includes a lower organic planarizing layer (OPL), a dielectric hard mask layer, and the metal-compound hard mask layer, an upper OPL, an optional anti-reflective coating (ARC) layer, and a photoresist layer. The metal-compound hard mask layer does not attenuate optical signals from lithographic alignment marks in underlying material layers, and can facilitate alignment between different levels in semiconductor manufacturing.