The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Aug. 07, 2013
Applicant:

Ultratech, Inc., San Jose, CA (US);

Inventors:

Arthur W. Zafiropoulo, Atherton, CA (US);

Andrew M. Hawryluk, Los Altos, CA (US);

Assignee:

Ultratech, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0275 (2013.01); H01L 21/3086 (2013.01); H01L 21/3065 (2013.01);
Abstract

Methods of laser processing photoresist in a gaseous environment to improve at least one of etch resistance and line-edge roughness are disclosed. The methods include sequentially introducing first and second molecular gases to the photoresist surface and performing respective first and second laser scanning of the surface for each molecular gas. The first molecular gas can be trimethyl aluminum, titanium tetrachloride or diethyl zinc, and the second molecular gas comprises water vapor. Short dwell times prevent the photoresist from flowing while serving to speed up the photoresist enhancement process.


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