The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Jun. 06, 2008
Harry Chuang, Austin, TX (US);
Kong-beng Thei, Hsin-Chu, TW;
Chih-tsung Yao, Hsinchu, TW;
Heng-kai Liu, Yangmei Township, TW;
Ming-jer Chiu, Hsinchu, TW;
Chien-wen Chen, Hsinchu, TW;
Harry Chuang, Austin, TX (US);
Kong-Beng Thei, Hsin-Chu, TW;
Chih-Tsung Yao, Hsinchu, TW;
Heng-Kai Liu, Yangmei Township, TW;
Ming-Jer Chiu, Hsinchu, TW;
Chien-Wen Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming photo masks having rectangular patterns and a method for forming a semiconductor structure using the photo masks is provided. The method for forming the photo masks includes determining a minimum spacing and identifying vertical conductive feature patterns having a spacing less than the minimum spacing value. The method further includes determining a first direction to expand and a second direction to shrink, and checking against design rules to see if the design rules are violated for each of the vertical conductive feature patterns identified. If designed rules are not violated, the identified vertical conductive feature pattern is replaced with a revised vertical conductive feature pattern having a rectangular shape. The photo masks are then formed. The semiconductor structure can be formed using the photo masks.