The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Apr. 25, 2013
United Microelectronics Corp., Hsinchu, TW;
Meng-Jia Lin, Changhua County, TW;
Chang-Sheng Hsu, Hsinchu, TW;
Kuo-Hsiung Huang, Hsinchu County, TW;
Wei-Hua Fang, Kaohsiung, TW;
Shou-Wei Hsieh, Hsinchu, TW;
Te-Yuan Wu, Hsinchu, TW;
Chia-Huei Lin, New Taipei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a semiconductor device is disclosed. Provided is a substrate having at least one MOS device, at least one metal interconnection and at least one MOS device formed on a first surface thereof. A first anisotropic etching process is performed to remove a portion of the substrate from a second surface of the substrate and thereby form a plurality of vias in the substrate, wherein the second surface is opposite to the first surface. A second anisotropic etching process is performed to remove another portion of the substrate from the second surface of the substrate and thereby form a cavity in the substrate, wherein the remaining vias are located below the cavity. An isotropic etching process is performed to the cavity and the remaining vias.