The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Mar. 22, 2012
Seth B. Darling, Chicago, IL (US);
Jeffrey W. Elam, Elmhurst, IL (US);
Yu-chih Tseng, Oakville, CA;
Qing Peng, Raleigh, NC (US);
Seth B. Darling, Chicago, IL (US);
Jeffrey W. Elam, Elmhurst, IL (US);
Yu-Chih Tseng, Oakville, CA;
Qing Peng, Raleigh, NC (US);
UChicago Argonne, LLC, Chicago, IL (US);
Abstract
A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.