The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

May. 14, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Akiteru Ko, Schenectady, NY (US);

Kosuke Ogasawara, Portland, OR (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); B44C 1/22 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/311 (2006.01); G03F 7/36 (2006.01);
U.S. Cl.
CPC ...
G03F 7/36 (2013.01);
Abstract

A method for patterning a substrate is described. The patterning method may include conformally depositing a material layer over a pattern according to a conformal deposition process, selectively depositing a second material layer on an exposed surface of the material layer according to a selected deposition process recipe; partially removing the material layer using a plasma etching process to expose a top surface of the pattern, open a portion of the material layer at a bottom region between adjacent features of the pattern, and retain a remaining portion of the material layer on sidewalls of the pattern; and removing the pattern using one or more etching processes to leave a final pattern comprising the remaining portion of the material layer and the second layer.


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